- Manufacture :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
2,779
In-stock
|
Diodes Incorporated | MOSFET Transistor Array | +/- 6 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel, PNP | 20 V | 630 mA | 300 mOhms | 500 mV | 736.6 pC | Enhancement | ||
|
|
GET PRICE |
4,216
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: | +/- 6 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 820 mA | 1.5 Ohms | - 1 V | 622.4 pC | Enhancement | ||
|
|
GET PRICE |
6,000
In-stock
|
Toshiba | MOSFET Small-signal MOSFET ID -5.4A, VDSS -12V | +/- 6 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5.4 A | 14 mOhms | - 1 V | 33 nC | Enhancement |
