- Manufacture :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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940
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET | - 6 V | SMD/SMT | U-WLB1515-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 8 V | - 10 A | 8.2 mOhms | - 1.1 V | 8.1 nC | Enhancement | ||||
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1,118
In-stock
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Texas instruments | MOSFET CSD23203W 8 V P-chan MOSFET 6-DSBGA | - 6 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 8 V | - 3 A | 16.2 mOhms | - 1.1 V | 6.3 nC | Enhancement | NexFET | |||
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1,508
In-stock
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Texas instruments | MOSFET P-CH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 8 V | - 5 A | 12.2 mOhms | - 800 mV | 6.5 nC | Enhancement | NexFET | |||
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821
In-stock
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Texas instruments | MOSFET CSD23203W 8V P-Ch NexFET Power MOSFET | - 6 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | Si | P-Channel | - 8 V | - 3 A | 16.2 mOhms | - 0.8 V | 4.9 nC | NexFET | |||||
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1,320
In-stock
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Texas instruments | MOSFET 8-V P-Channel NexFET Power MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 8 V | - 5 A | 14 mOhms | - 450 mV | 18.9 nC | Enhancement | NexFET |
