- Manufacture :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,975
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH Mode FET -20V -6 | - 6 V | SMD/SMT | U-WLB1010-4 | - 55 C | + 150 C | Reel | Si | P-Channel | - 20 V | - 4.1 A | 40 mOhms | - 800 mV | 2.3 nC | Enhancement | |||||
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3,144
In-stock
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Texas instruments | MOSFET Dual P-CH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 2.4 A | 27 mOhms | - 800 mV | 2.9 nC | NexFET | |||||
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1,508
In-stock
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Texas instruments | MOSFET P-CH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 8 V | - 5 A | 12.2 mOhms | - 800 mV | 6.5 nC | Enhancement | NexFET | |||
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1,141
In-stock
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Texas instruments | MOSFET PCh NexFET Power MOSFET | - 6 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 33 mOhms | - 800 mV | 3.4 nC | NexFET |
