MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	SQJ456EP-T1_GE3	1+ $4.770 10+ $3.830 100+ $3.490 250+ $3.150 3000+ $2.270		PDF RFQ	2,990 In-stock	Vishay Semiconductors	MOSFET 100V 32A 83W AEC-Q101 Qualified	+/- 20 V	SMD/SMT	PowerPAK-SO-8L-4	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	100 V	32 A	0.021 Ohms	2.5 V	63 nC	Enhancement	TrenchFET
	IPW60R190E6	1+ $3.090 10+ $2.620 100+ $2.270 250+ $2.160		PDF RFQ	678 In-stock	Infineon Technologies	MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6	+/- 20 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	20.2 A	170 mOhms	2.5 V	63 nC	Enhancement	CoolMOS
	IPW60R190E6FKSA1	1+ $3.090 10+ $2.620 100+ $2.270 250+ $2.160		PDF RFQ	240 In-stock	Infineon Technologies	MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6	+/- 20 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	20.2 A	170 mOhms	2.5 V	63 nC	Enhancement	CoolMOS

SQJ456EP-T1_GE3

SQJ456EP-T1_GE3

Vishay Semiconductors

MOSFET 100V 32A 83W AEC-Q101 Qualified

Stock : 2,990

1+: $4.770

10+: $3.830

100+: $3.490

250+: $3.150

3000+: $2.270

IPW60R190E6

IPW60R190E6

Infineon Technologies

MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6

Stock : 678

1+: $3.090

10+: $2.620

100+: $2.270

250+: $2.160

IPW60R190E6FKSA1

IPW60R190E6FKSA1

Infineon Technologies

MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6

Stock : 240

1+: $3.090

10+: $2.620

100+: $2.270

250+: $2.160

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