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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
1,980
In-stock
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Vishay Semiconductors | MOSFET 100V 40A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-Reverse-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 0.019 Ohms | 1.5 V | 70 nC | Enhancement | TrenchFET | ||
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GET PRICE |
7,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 25A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | ||
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GET PRICE |
1,644
In-stock
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Siliconix / Vishay | MOSFET 100V 50A 45watt AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 0.0071 Ohms | 1.5 V | 70 nC | Enhancement | TrenchFET | ||
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GET PRICE |
274
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 89 mOhms | 3.5 V | 70 nC | Enhancement | CoolMOS | ||
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VIEW | Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 89 mOhms | 3.5 V | 70 nC | Enhancement | CoolMOS | |||
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GET PRICE |
725
In-stock
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Vishay Semiconductors | MOSFET 150V 40A 166W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 40 A | 0.027 Ohms | 2.5 V | 70 nC | Enhancement | TrenchFET | ||
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GET PRICE |
7,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 25A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | ||
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VIEW | Vishay Semiconductors | MOSFET 100V 40A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 0.019 Ohms | 1.5 V | 70 nC | Enhancement | TrenchFET |
