- Manufacture :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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20,433
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 150mA SOT-323-3 | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 150 mA | 4.6 Ohms | - 2 V | 1.5 nC | Enhancement | |||
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3,970
In-stock
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Diodes Incorporated | MOSFET P-Ch -50V Enh FET 10Ohm -5Vgs -130mA | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 130 mA | 1.2 Ohms | - 2 V | 900 pC | Enhancement | |||
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7,950
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 150mA SOT-323-3 | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 150 mA | 4.6 Ohms | - 2 V | 1.5 nC | Enhancement | |||
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8,545
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | SOT-323-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.6 A | 227 mOhms | - 2.6 V | 2.2 nC | Enhancement | ||||
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18,000
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 150mA SOT-323-3 | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 150 mA | 4.6 Ohms | - 2 V | 1.5 nC | Enhancement |
