- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
450
In-stock
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Infineon Technologies | MOSFET | +/- 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 9 A | 0.3 Ohms | 3 V | 13 nC | Enhancement | CoolMOS | |||
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GET PRICE |
327
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 63.3A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 63.3 A | 43 mOhms | 3.5 V | 270 nC | Enhancement | CoolMOS | ||
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GET PRICE |
5,085
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | +/- 20 V | Through Hole | TO-251-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | |||
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GET PRICE |
316
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31.2A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | ||
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GET PRICE |
175
In-stock
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Infineon Technologies | MOSFET AUTOMOTIVE | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | ||
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GET PRICE |
2,200
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 31.2A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | ||
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GET PRICE |
3,190
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 43.3A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 43.3 A | 72 mOhms | 3.5 V | 161 nC | Enhancement | CoolMOS | ||
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GET PRICE |
11,300
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 43.3A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 43.3 A | 72 mOhms | 3.5 V | 161 nC | Enhancement | CoolMOS | ||
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GET PRICE |
160
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 17.5A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 171 mOhms | 3.5 V | 68 nC | Enhancement | CoolMOS | ||
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GET PRICE |
485
In-stock
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Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 19 A | 0.149 Ohms | 3 V | 25 nC | Enhancement | CoolMOS | |||
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GET PRICE |
500
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 10 A | 0.31 Ohms | 3 V | 13 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 17.5A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 171 mOhms | 3.5 V | 68 nC | Enhancement | CoolMOS | |||
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GET PRICE |
240
In-stock
|
Infineon Technologies | MOSFET AUTOMOTIVE | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | ||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 63.3A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 63.3 A | 43 mOhms | 3.5 V | 270 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 6A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6 A | 594 mOhms | 3.5 V | 20 nC | Enhancement | CoolMOS |
