- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
306,500
In-stock
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Nexperia | MOSFET PMV50EPEA/TO-236AB/REEL 7 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.2 A | 35 mOhms | - 3 V | 19.2 nC | Enhancement | ||
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2,923
In-stock
|
Nexperia | MOSFET 40V P-channel Trench MOSFET | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 1.5 A | 400 mOhms | - 1 V | 4.7 nC | Enhancement | |||
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2,235
In-stock
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Nexperia | MOSFET 30 V, P-channel Trench MOSFET | +/- 20 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2.4 A | 100 mOhms | - 2.5 V | 11 nC | Enhancement |
