- Mounting Style :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
-
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- - 80 A (4)
- - 9.7 A (2)
- Rds On - Drain-Source Resistance :
-
- - 70 mOhms (1)
- 0.0056 Ohms (2)
- 0.0071 Ohms (1)
- 0.0072 Ohms (1)
- 0.013 Ohms (2)
- 0.0135 Ohms (1)
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- 0.046 Ohms (1)
- 0.05 Ohms (2)
- 0.067 Ohms (1)
- 0.07 Ohms (1)
- 0.079 Ohms (2)
- 0.13 Ohms (2)
- 0.23 Ohms (1)
- 0.268 Ohms (1)
- 1.4 Ohms (3)
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- 100 mOhms (2)
- 101 mOhms (2)
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- 110 mOhms (4)
- 120 mOhms (1)
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- 200 mOhms (2)
- 21 mOhms (5)
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- 230 mOhms (5)
- 239 mOhms (2)
- 25 mOhms (4)
- 257 mOhms (1)
- 28 mOhms (1)
- 29.5 mOhms (1)
- 33 mOhms (1)
- 36 mOhms (1)
- 4.6 Ohms (3)
- 400 mOhms (1)
- 47 mOhms (2)
- 5.8 Ohms (5)
- 500 mOhms (2)
- 620 mOhms (1)
- 69 mOhms (2)
- 72 mOhms (3)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- - 13 nC (3)
- - 14 nC (2)
- - 20 nC (3)
- - 28 nC (2)
- 1 nC (1)
- 1.5 nC (8)
- 100 nC (1)
- 108 nC (1)
- 12 nC (1)
- 14 nC (1)
- 140 nC (1)
- 15 nC (3)
- 150 nC (1)
- 155 nC (1)
- 17.2 nC (2)
- 173 nC (4)
- 18.1 nC (1)
- 2.9 nC (1)
- 200 nC (1)
- 21 nC (2)
- 22 nC (2)
- 24 nC (1)
- 25 nC (3)
- 26 nC (3)
- 270 nC (2)
- 3.57 nC (3)
- 30 nC (3)
- 300 nC (1)
- 33 nC (4)
- 33.5 nC (1)
- 38 nC (2)
- 4.1 nC (1)
- 4.3 nC (1)
- 40 nC (2)
- 41 nC (1)
- 48 nC (2)
- 5.2 nC (1)
- 5.4 nC (1)
- 53.1 nC (4)
- 6 nC (1)
- 7.8 nC (1)
- 8.5 nC (1)
- 9 nC (1)
- Tradename :
83 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
6,462
In-stock
|
onsemi | MOSFET T1 60V PCH | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.1 A | 183 mOhms | - 2.5 V | 4.3 nC | Enhancement | ||||
|
|
2,700
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.5 A | 257 mOhms | - 3 V | 4.1 nC | Enhancement | ||||
|
|
1,408
In-stock
|
onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | ATPAK-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 27 A | 33 mOhms | - 2.6 V | 33.5 nC | Enhancement | ||||
|
|
GET PRICE |
111,683
In-stock
|
Vishay Semiconductors | MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 5.3 A | 0.079 Ohms | - 2.5 V | 22 nC | Enhancement | TrenchFET | ||
|
|
54,053
In-stock
|
Vishay Semiconductors | MOSFET 60V -1.7A 2W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-236-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.7 A | 0.268 Ohms | - 2.5 V | 8.5 nC | Enhancement | TrenchFET | |||
|
|
GET PRICE |
6,078
In-stock
|
Vishay Semiconductors | MOSFET 60V 50A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 50 A | 0.0135 Ohms | - 2.5 V | 150 nC | Enhancement | TrenchFET | ||
|
|
5,382
In-stock
|
Vishay Semiconductors | MOSFET 60 V 120A 375 W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 120 A | 0.0056 Ohms | - 2.5 V | 270 nC | Enhancement | TrenchFET | |||
|
|
33,217
In-stock
|
Infineon Technologies | MOSFET P-Ch SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 330 mA | 1.4 Ohms | - 2 V | 3.57 nC | Enhancement | ||||
|
|
3,813
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -30A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 69 mOhms | - 4 V | 48 nC | Enhancement | SIPMOS | |||
|
|
9,628
In-stock
|
Vishay Semiconductors | MOSFET 60V 20A 46W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 20 A | 0.046 Ohms | - 2.5 V | 41 nC | Enhancement | TrenchFET | |||
|
|
1,439
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | SIPMOS | |||
|
|
1,856
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 80A D2PAK-2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | SIPMOS | |||
|
|
3,942
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -18.6A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 18.6 A | 100 mOhms | - 4 V | 33 nC | Enhancement | SIPMOS | |||
|
|
GET PRICE |
11,566
In-stock
|
onsemi | MOSFET PFET TSOP6 60V 2.5A 111MO | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.5 A | 72 mOhms | - 3 V | 18.1 nC | Enhancement | |||
|
|
3,938
In-stock
|
Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 52 A | 0.0155 Ohms | - 2.5 V | 108 nC | Enhancement | ||||
|
|
3,524
In-stock
|
Vishay Semiconductors | MOSFET -60V -4.6A 3.75W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 4.6 A | 0.067 Ohms | - 2.5 V | 40 nC | Enhancement | TrenchFET | |||
|
|
9,460
In-stock
|
onsemi | MOSFET PFET U8FL 60V | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 20 A | 72 mOhms | - 1 V to - 3 V | 25 nC | |||||
|
|
47,027
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement | ||||
|
|
GET PRICE |
38,770
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -1.9A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.9 A | 239 mOhms | - 4 V | - 14 nC | Enhancement | |||
|
|
4,106
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -1.17A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.17 A | 500 mOhms | - 2 V | 5.2 nC | Enhancement | ||||
|
|
GET PRICE |
27,400
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -1.9A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.9 A | 239 mOhms | - 4 V | - 14 nC | Enhancement | |||
|
|
3,762
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 1.9A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.9 A | 210 mOhms | - 2 V | - 20 nC | Enhancement | ||||
|
|
2,986
In-stock
|
Diodes Incorporated | MOSFET P-Ch 60V Enh Mode 145W 20Vgs 2569pF | +/- 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 60 V | - 7 A | 28 mOhms | - 3 V | 53.1 nC | Enhancement | |||||
|
|
3,825
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 9.7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 9.7 A | 200 mOhms | - 2 V | 21 nC | Enhancement | SIPMOS | |||
|
|
GET PRICE |
30,120
In-stock
|
onsemi | MOSFET PFET U8FL 60V | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 20 A | 72 mOhms | - 1 V to - 3 V | 25 nC | ||||
|
|
3,170
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 1.9A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.9 A | 210 mOhms | - 2 V | - 20 nC | Enhancement | ||||
|
|
2,100
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -8.8A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8.83 A | 230 mOhms | - 4 V | - 13 nC | Enhancement | SIPMOS | |||
|
|
1,809
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -2.9A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.9 A | 110 mOhms | - 4 V | 33 nC | Enhancement | ||||
|
|
2,434
In-stock
|
Diodes Incorporated | MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 6.6 A | 25 mOhms | - 3 V | 53.1 nC | Enhancement | ||||
|
|
9,332
In-stock
|
Vishay Semiconductors | MOSFET 60V (D-S) -/+20V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 100 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.6 A | 0.23 Ohms | - 2.5 V | 5.4 nC | Enhancement | TrenchFET |
