- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,417
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 40V 25mOhm -8.6A | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8.6 A | 18 mOhms | - 1.8 V | 33.7 nC | Enhancement | |||
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2,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 20Vgss 0.9W -80A | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.6 A | 25 mOhms | - 2.1 V | 47 nC | Enhancement | |||
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3,000
In-stock
|
Diodes Incorporated | MOSFET 30V P-Ch Enh FET 20Vgss 0.9W -80A | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.6 A | 25 mOhms | - 2.1 V | 47 nC | Enhancement |
