MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IPW60R190E6	1+ $3.090 10+ $2.620 100+ $2.270 250+ $2.160		PDF RFQ	678 In-stock	Infineon Technologies	MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6	+/- 20 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	20.2 A	170 mOhms	2.5 V	63 nC	Enhancement	CoolMOS
	IPW60R190P6	1+ $2.940 10+ $2.500 100+ $2.000 500+ $1.750		PDF RFQ	232 In-stock	Infineon Technologies	MOSFET HIGH POWER_PRC/PRFRM	+/- 20 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	20.2 A	171 mOhms	3.5 V	37 nC	Enhancement	CoolMOS
	IPW60R190E6FKSA1	1+ $3.090 10+ $2.620 100+ $2.270 250+ $2.160		PDF RFQ	240 In-stock	Infineon Technologies	MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6	+/- 20 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	20.2 A	170 mOhms	2.5 V	63 nC	Enhancement	CoolMOS

IPW60R190E6

IPW60R190E6

Infineon Technologies

MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6

Stock : 678

1+: $3.090

10+: $2.620

100+: $2.270

250+: $2.160

IPW60R190P6

IPW60R190P6

Infineon Technologies

MOSFET HIGH POWER_PRC/PRFRM

Stock : 232

1+: $2.940

10+: $2.500

100+: $2.000

500+: $1.750

IPW60R190E6FKSA1

IPW60R190E6FKSA1

Infineon Technologies

MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6

Stock : 240

1+: $3.090

10+: $2.620

100+: $2.270

250+: $2.160

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