- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,397
In-stock
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Siliconix / Vishay | MOSFET N-Channel 150V SO-8 | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 0.07 Ohms | 2.5 V | 33 nC | Enhancement | |||||
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435
In-stock
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Infineon Technologies | MOSFET | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 18 A | 0.145 Ohms | 3 V | 25 nC | Enhancement | CoolMOS | |||||
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214
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 111 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | ||||
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435
In-stock
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Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK1212-8W | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 18 A | 0.016 Ohms | 1.5 V | 25 nC | Enhancement | |||||
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480
In-stock
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Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 18 A | 0.145 Ohms | 3 V | 25 nC | Enhancement | CoolMOS | |||||
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5,000
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 18 A | 0.145 Ohms | 3 V | 25 nC | Enhancement | CoolMOS | |||||
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230
In-stock
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Infineon Technologies | MOSFET | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 18 A | 0.145 Ohms | 3 V | 25 nC | Enhancement | CoolMOS | |||||
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450
In-stock
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Infineon Technologies | MOSFET | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 18 A | 0.145 Ohms | 3 V | 25 nC | Enhancement | CoolMOS | |||||
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VIEW | Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 111 mOhms | 3 V | 35 nC | Enhancement | CoolMOS |