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Maximum Operating Temperature :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
9 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
SQ4080EY-T1_GE3
1+
$1.220
10+
$0.975
100+
$0.749
500+
$0.662
2500+
$0.488
RFQ
2,397
In-stock
Siliconix / Vishay MOSFET N-Channel 150V SO-8 +/- 20 V SMD/SMT SO-8 - 55 C + 175 C Reel 1 Channel Si N-Channel 150 V 18 A 0.07 Ohms 2.5 V 33 nC Enhancement  
IPAW60R180P7SXKSA1
1+
$2.310
10+
$1.960
100+
$1.570
500+
$1.380
RFQ
435
In-stock
Infineon Technologies MOSFET +/- 20 V Through Hole TO-220FP-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 18 A 0.145 Ohms 3 V 25 nC Enhancement CoolMOS
IPW65R125C7
1+
$4.840
10+
$4.110
100+
$3.560
250+
$3.380
RFQ
214
In-stock
Infineon Technologies MOSFET HIGH POWER_NEW +/- 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 18 A 111 mOhms 3 V 35 nC Enhancement CoolMOS
SQ7414AENW-T1_GE3
1+
$0.960
10+
$0.744
100+
$0.565
500+
$0.480
3000+
$0.348
RFQ
435
In-stock
Siliconix / Vishay MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified +/- 20 V SMD/SMT PowerPAK1212-8W - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 18 A 0.016 Ohms 1.5 V 25 nC Enhancement  
IPD60R180P7ATMA1
1+
$2.310
10+
$1.960
100+
$1.570
500+
$1.380
RFQ
480
In-stock
Infineon Technologies MOSFET +/- 20 V SMD/SMT TO-252-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 18 A 0.145 Ohms 3 V 25 nC Enhancement CoolMOS
IPA60R180P7XKSA1
1+
$2.410
10+
$2.050
100+
$1.640
500+
$1.440
RFQ
5,000
In-stock
Infineon Technologies MOSFET HIGH POWER_NEW +/- 20 V Through Hole TO-220FP-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 18 A 0.145 Ohms 3 V 25 nC Enhancement CoolMOS
IPW60R180P7XKSA1
1+
$2.830
10+
$2.410
100+
$2.090
250+
$1.980
RFQ
230
In-stock
Infineon Technologies MOSFET +/- 20 V Through Hole TO-247-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 18 A 0.145 Ohms 3 V 25 nC Enhancement CoolMOS
IPP60R180P7XKSA1
1+
$2.410
10+
$2.050
100+
$1.640
500+
$1.440
RFQ
450
In-stock
Infineon Technologies MOSFET +/- 20 V Through Hole TO-220-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 18 A 0.145 Ohms 3 V 25 nC Enhancement CoolMOS
IPW65R125C7XKSA1
1+
$4.840
10+
$4.110
100+
$3.560
250+
$3.380
VIEW
RFQ
Infineon Technologies MOSFET HIGH POWER_NEW +/- 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 18 A 111 mOhms 3 V 35 nC Enhancement CoolMOS
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