- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,808
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 155 A | 5 mOhms | 2 V | 92 nC | Enhancement | OptiMOS | ||||
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4,876
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 90 A | 3.5 mOhms | - 4 V | 154 nC | Enhancement | OptiMOS | ||||
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1,880
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 300 A | 370 mOhms | 700 mV | 336 nC | Enhancement | OptiMOS | ||||
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1,837
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 300 A | 1.7 mOhms | 2 V | 207 nC | Enhancement | OptiMOS | ||||
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2,199
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 90A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.6 mOhms | - 4 V | 130 nC | Enhancement | OptiMOS | ||||
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8,984
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 9.2 mOhms | - 4 V | 51 nC | Enhancement | OptiMOS | ||||
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1,320
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 300 A | 1.7 mOhms | 2 V | 207 nC | Enhancement | OptiMOS | ||||
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1,982
In-stock
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Infineon Technologies | MOSFET LV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 300 A | 370 mOhms | 700 mV | 336 nC | Enhancement | OptiMOS | ||||
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5,377
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 5.7 mOhms | - 2 V | - 126 nC | Enhancement | OptiMOS | ||||
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452
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 155 A | 5 mOhms | 2 V | 92 nC | Enhancement | OptiMOS | ||||
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1,686
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 3.7 mOhms | - 4 V | 151 nC | Enhancement | OptiMOS | ||||
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771
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -85A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 85 A | 5.3 mOhms | - 4 V | 89 nC | Enhancement | OptiMOS | ||||
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10,000
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 660 uOhms | 2.1 V | 287 nC | Enhancement | OptiMOS | ||||
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3,390
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 660 uOhms | 2.1 V | 287 nC | Enhancement | OptiMOS | ||||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 300 mOhms | 2.1 V | 31.5 nC | Enhancement | OptiMOS | ||||
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2,180
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 7.8 mOhms | 1.2 V | 41.8 nC | Enhancement | OptiMOS |