- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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16,279
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 3.2A SOT-89-3 | +/- 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3.2 A | 47 mOhms | 1.3 V | 5.6 nC | Enhancement | |||
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2,342
In-stock
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Infineon Technologies | MOSFET P-Ch -250V -190mA SOT-89-3 | +/- 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 190 mA | 7.7 Ohms | - 2 V | - 6.1 nC | Enhancement | |||
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984
In-stock
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Infineon Technologies | MOSFET P-Ch -250V -190mA SOT-89-3 | +/- 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 190 mA | 7.7 Ohms | - 2 V | - 6.1 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 190 mA | 20 Ohms | - 2 V | - 0.2 nC | Enhancement |
