- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,702
In-stock
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Vishay Semiconductors | MOSFET -60V -8A 27W AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 60 V, - 60 V | - 8 A, - 8 A | 0.067 Ohms, 0.067 Ohms | - 2.5 V, - 2.5 V | 40 nC, 40 nC | Enhancement | TrenchFET | |||
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5,646
In-stock
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Vishay Semiconductors | MOSFET Dual P-Channel 60V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 60 V, - 60 V | - 4.4 A, - 4.4 A | 0.07 Ohms, 0.07 Ohms | - 2.5 V, - 2.5 V | 40 nC, 40 nC | Enhancement | TrenchFET | |||
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1,469
In-stock
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Vishay Semiconductors | MOSFET Dual P-Channel 60V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 60 V, - 60 V | - 8 A, - 8 A | 0.04 Ohms, 0.04 Ohms | - 2.5 V, - 2.5 V | 65 nC, 65 nC | Enhancement | TrenchFET |
