- Manufacture :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,955
In-stock
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Diodes Incorporated | MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V, - 60 V | - 11.3 A, - 11.3 A | 36 mOhms, 36 mOhms | - 3 V, - 3 V | 24 nC, 24 nC | Enhancement | |||
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VIEW | onsemi | MOSFET PCH+PCH 4V DRIVE SERIES | +/- 20 V, +/- 20 V | SMD/SMT | VEC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V, - 60 V | - 2.5 A, - 2.5 A | 194 mOhms, 194 mOhms | - 2.6 V, - 2.6 V | 11 nC, 11 nC | Enhancement | |||
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14,440
In-stock
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Diodes Incorporated | MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V, - 60 V | - 3.3 A, - 3.3 A | 130 mOhms, 130 mOhms | - 1 V, - 1 V | 17.2 nC, 17.2 nC | Enhancement | |||
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2,495
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V, - 60 V | - 2.9 A, - 2.9 A | 125 mOhms, 125 mOhms | - 1 V, - 1 V | 24.2 nC, 24.2 nC | Enhancement |
