- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,674
In-stock
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Diodes Incorporated | MOSFET P-CH. MOSFET BVDSS: 25V-30V, AEC-Q101 | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.5 A | 150 mOhms | - 1.3 V | 12 nC | Enhancement | |||
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2,774
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 72mOhm -10V -3.9A | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.3 A | 57 mOhms | - 1.3 V | 15.9 nC | Enhancement |
