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- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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6,264
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 65mOhm | - 8 V, + 18 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 36 A | 90 mOhms | 1.8 V | 30.4 nC | Enhancement | ||
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GET PRICE |
1,000
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 65mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 35 A | 90 mOhms | 1.8 V | 30 nC | Enhancement | ||
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GET PRICE |
1,348
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET/ Reel 900V, 120 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Reel | 1 Channel | SiC | N-Channel | 900 V | 22 A | 170 mOhms | 1.8 V | 17.3 nC | Enhancement | ||
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GET PRICE |
376
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 120 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 22 A | 170 mOhms | 1.8 V | 17.3 nC | Enhancement | ||
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GET PRICE |
1,343
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 280 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 11 A | 385 mOhms | 1.8 V | 9.5 nC | Enhancement | ||
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GET PRICE |
1,461
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET/ Reel 900V, 280 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Reel | 1 Channel | SiC | N-Channel | 900 V | 11 A | 385 mOhms | 1.8 V | 9.5 nC | Enhancement |
