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Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
10 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STW8NK80Z
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RFQ
868
In-stock
STMicroelectronics MOSFET N-Ch 800 Volt 6.2A Zener SuperMESH 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 6.2 A 1.5 Ohms   46 nC Enhancement
STP8NK80Z
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RFQ
801
In-stock
STMicroelectronics MOSFET N-Ch 800 Volt 6.2Amp Zener SuperMESH 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 6.2 A 1.5 Ohms   46 nC Enhancement
STP8NK80ZFP
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RFQ
46,200
In-stock
STMicroelectronics MOSFET N-Ch 800 Volt 6.2 A 30 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 6.2 A 1.5 Ohms   46 nC Enhancement
TK10A80E,S4X
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RFQ
14,200
In-stock
Toshiba MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS 30 V Through Hole TO-220FP-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 800 V 10 A 700 mOhms 4 V 46 nC Enhancement
TK9J90E,S1E
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RFQ
388
In-stock
Toshiba MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN 30 V Through Hole TO-3PN-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 900 V 9 A 1 Ohms 4 V 46 nC Enhancement
TK9A90E,S4X
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RFQ
46,800
In-stock
Toshiba MOSFET PLN MOS 900V 1300m (VGS=10V) TO-220SIS 30 V Through Hole TO-220FP-3 - 55 C + 150 C   1 Channel Si N-Channel 900 V 9 A 1 Ohms 4 V 46 nC Enhancement
TK10J80E,S1E
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RFQ
Toshiba MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN 30 V Through Hole TO-3PN-3 - 55 C + 150 C   1 Channel Si N-Channel 800 V 10 A 700 mOhms 4 V 46 nC Enhancement
STW24NM60N
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RFQ
STMicroelectronics MOSFET N-Ch 600V 0.18 Ohm 17A MDmesh II 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 17 A 190 mOhms   46 nC Enhancement
STP24NM60N
VIEW
RFQ
STMicroelectronics MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II 30 V Through Hole TO-220-3     Tube 1 Channel Si N-Channel 650 V 17 A 168 mOhms 3 V 46 nC  
STB24NM60N
VIEW
RFQ
STMicroelectronics MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II 30 V SMD/SMT TO-263-3     Reel 1 Channel Si N-Channel 600 V 17 A 168 mOhms 3 V 46 nC  
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