- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Applied Filters :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
868
In-stock
|
STMicroelectronics | MOSFET N-Ch 800 Volt 6.2A Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.2 A | 1.5 Ohms | 46 nC | Enhancement | ||||
|
GET PRICE |
801
In-stock
|
STMicroelectronics | MOSFET N-Ch 800 Volt 6.2Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.2 A | 1.5 Ohms | 46 nC | Enhancement | ||||
|
GET PRICE |
46,200
In-stock
|
STMicroelectronics | MOSFET N-Ch 800 Volt 6.2 A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.2 A | 1.5 Ohms | 46 nC | Enhancement | ||||
|
GET PRICE |
14,200
In-stock
|
Toshiba | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 10 A | 700 mOhms | 4 V | 46 nC | Enhancement | |||
|
GET PRICE |
388
In-stock
|
Toshiba | MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 9 A | 1 Ohms | 4 V | 46 nC | Enhancement | |||
|
GET PRICE |
46,800
In-stock
|
Toshiba | MOSFET PLN MOS 900V 1300m (VGS=10V) TO-220SIS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 9 A | 1 Ohms | 4 V | 46 nC | Enhancement | ||||
|
VIEW | Toshiba | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 10 A | 700 mOhms | 4 V | 46 nC | Enhancement | |||||
|
VIEW | STMicroelectronics | MOSFET N-Ch 600V 0.18 Ohm 17A MDmesh II | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 17 A | 190 mOhms | 46 nC | Enhancement | |||||
|
VIEW | STMicroelectronics | MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 17 A | 168 mOhms | 3 V | 46 nC | |||||||
|
VIEW | STMicroelectronics | MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II | 30 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 17 A | 168 mOhms | 3 V | 46 nC |