- Manufacture :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,602
In-stock
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Diodes Incorporated | MOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W | +/- 10 V, +/- 10 V | SMD/SMT | U-DFN2030-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 5.7 A, - 5.7 A | 25 mOhms, 25 mOhms | - 1.4 V, - 1.4 V | 21.4 nC, 21.4 nC | Enhancement | ||
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GET PRICE |
2,500
In-stock
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Texas instruments | MOSFET 30-V Dual N-Channel NexFET Power MOSFETs 8-WSO... | +/- 10 V, +/- 10 V | SMD/SMT | WSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 17 A, 17 A | 4.6 mOhms, 4.6 mOhms | 0.6 V, 0.6 V | 28 nC, 28 nC | Enhancement | ||
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GET PRICE |
250
In-stock
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Texas instruments | MOSFET 30-V Dual N-Channel NexFET Power MOSFETs 8-WSO... | +/- 10 V, +/- 10 V | SMD/SMT | WSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 17 A, 17 A | 4.6 mOhms, 4.6 mOhms | 0.6 V, 0.6 V | 28 nC, 28 nC | Enhancement | ||
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VIEW | Toshiba | MOSFET Small Signal MOSFET | +/- 10 V, +/- 10 V | SMD/SMT | ES6-6 | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 180 mA, - 100 mA | 20 Ohms, 44 Ohms | 400 mV, - 400 mV | Enhancement |
