- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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15,227
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch ENH Mode 495mOhm -4.5V -0.77A | + /- 8 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.17 A | 960 mOhms | - 0.7 V | 1.5 nC | Enhancement | ||
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GET PRICE |
27,000
In-stock
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Diodes Incorporated | MOSFET 12V P-CH ENH Mode 16mOhm 4.5V -9.1A | + /- 8 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 12 V | - 11.2 A | 46 mOhms | - 0.8 V | 28.4 nC | Enhancement | ||
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GET PRICE |
7,976
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | + /- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4 A | 31 mOhms | - 0.55 V | 15.8 nC | Enhancement |
