- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Applied Filters :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,212
In-stock
|
Infineon Technologies | MOSFET LV POWER MOS | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.25 mOhms | 1.2 V | 20 nC | Enhancement | |||||
|
3,133
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 28 A | 1.6 mOhms | Enhancement | OptiMOS | ||||||
|
4,489
In-stock
|
Infineon Technologies | MOSFET LV POWER MOS | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.25 mOhms | 1.2 V | 20 nC | Enhancement | |||||
|
3,934
In-stock
|
Infineon Technologies | MOSFET LV POWER MOS | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 82 A | 4 mOhms | 1.2 V | 12 nC | Enhancement | |||||
|
10,011
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3M | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 5.7 mOhms | Enhancement | OptiMOS | ||||||
|
2,085
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 16 V | SMD/SMT | TDSON-8 | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 20 A | 8 mOhms | OptiMOS | ||||||||
|
3,188
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 80A TDSON-8 OptiMOS 3M | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 5 mOhms | Enhancement | OptiMOS | ||||||
|
4,774
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | 16 V | SMD/SMT | TDSON-8 | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V | 20 A | 11.2 mOhms | OptiMOS | ||||||||
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 16 V | SMD/SMT | TDSON-8 | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 20 A | 11.6 mOhms | OptiMOS | ||||||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 20 A | 7.2 mOhms | 1.7 V | 39 nC | Enhancement |