- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,299
In-stock
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IR / Infineon | MOSFET MOSFT 20V 6.5A 30mOhm 15nC Log Lvl | 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.5 A | 30 mOhms | 1.2 V | 15 nC | |||
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6,838
In-stock
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Infineon Technologies | MOSFET MOSFT 20V 6.5A 30mOhm 22nC Micro 8 | 12 V | SMD/SMT | Micro-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 6.5 A | 30 mOhms | 22 nC | ||||||
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4,759
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 20Vdss 12Vgss 30A | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.5 A | 21 mOhms | 900 mV | 8.5 nC | Enhancement | ||
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GET PRICE |
32,518
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL ENHANCEMENT MODE | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.5 A | 25 mOhms | Enhancement |
