- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
416,200
In-stock
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Infineon Technologies | MOSFET MOSFT 20V 4.2A 45mOhm 8nC Log Lvl | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 4.2 A | 45 mOhms | 8 nC | ||||||
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GET PRICE |
6,965
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 20V 5.4A Micro 8 | 12 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5.4 A | 45 mOhms | 1.2 V | 18 nC | Enhancement | ||
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GET PRICE |
7,735
In-stock
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Infineon Technologies | MOSFET MOSFT 20V 4.2A 45mOhm 8nC Log Lvl | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 4.2 A | 45 mOhms | 8 nC | ||||||
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GET PRICE |
8,868
In-stock
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Diodes Incorporated | MOSFET 20V N-Channel Enhance. Mode MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.9 A | 45 mOhms | Enhancement | ||||
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GET PRICE |
346
In-stock
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Diodes Incorporated | MOSFET 20V P-Chnl HDMOS | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8 A | 45 mOhms | Enhancement | ||||
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GET PRICE |
6,398
In-stock
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IR / Infineon | MOSFET 20V DUAL N-CH LOGIC LEVEL HEXFET | 12 V | SMD/SMT | PQFN-6 | Reel | 2 Channel | Si | N-Channel | 20 V | 4.5 A | 45 mOhms | 3.1 nC |
