- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
25,053
In-stock
|
Nexperia | MOSFET 30V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.4 A | 36 mOhms | 400 mV | 12 nC | Enhancement | ||
|
|
GET PRICE |
18,008
In-stock
|
Nexperia | MOSFET 30V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.2 A | 23 mOhms | 400 mV | 12.4 nC | Enhancement | ||
|
|
GET PRICE |
43,925
In-stock
|
Nexperia | MOSFET 20V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.4 A | 24 mOhms | 400 mV | 6.2 nC | Enhancement | ||
|
|
GET PRICE |
13,841
In-stock
|
onsemi | MOSFET NCH 1.8V Power MOSFE | 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2 A | 310 mOhms | 400 mV | 1.8 nC | Enhancement | ||
|
|
GET PRICE |
8,382
In-stock
|
Nexperia | MOSFET 20V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8.6 A | 20 mOhms | 400 mV | 13.4 nC | Enhancement | ||
|
|
GET PRICE |
4,288
In-stock
|
onsemi | MOSFET NCH 4V Power MOSFET | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 130 mOhms | 400 mV | 4.7 nC | Enhancement | ||
|
|
GET PRICE |
7,318
In-stock
|
onsemi | MOSFET NCH 1.8V DRIVE SERIE | 12 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.5 A | 54 mOhms | 400 mV | 2.8 nC | Enhancement | |||
|
|
GET PRICE |
2,646
In-stock
|
onsemi | MOSFET NCH 1.8V DRIVESERIES | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 38 mOhms | 400 mV | 4.7 nC | Enhancement | ||
|
|
GET PRICE |
2,960
In-stock
|
Nexperia | MOSFET 20V single N-channel Trench MOSFET | 12 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 12.9 A | 25 mOhms | 400 mV | 23 nC | Enhancement | ||
|
|
GET PRICE |
10,000
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K | 12 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 760 mA | 600 mOhms | 400 mV | 930 pC | Enhancement | ||
|
|
GET PRICE |
27
In-stock
|
Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 12Vgs 292pF 3.8nC | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.4 A | 72 mOhms | 400 mV | 3.8 nC | Enhancement | ||
|
|
GET PRICE |
6,948
In-stock
|
Toshiba | MOSFET Small-signal FET 2.3A 30V 0.145Ohm | 12 V | SMD/SMT | ES6-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.3 A | 66 mOhms | 400 mV | Enhancement | ||||
|
|
GET PRICE |
5,805
In-stock
|
onsemi | MOSFET NCH 1.8V DRIVE SERIE | 12 V | SMD/SMT | SOT-323-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2 A | 93 mOhms | 400 mV | 1.8 nC | Enhancement | |||
|
|
GET PRICE |
2,910
In-stock
|
onsemi | MOSFET NCH 1.8V DRIVE SERIE | 12 V | SMD/SMT | SOT-323-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.5 A | 29 mOhms | 400 mV | 5.1 nC | Enhancement | |||
|
|
GET PRICE |
2,957
In-stock
|
onsemi | MOSFET NCH 1.8V Power MOSFE | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.5 A | 99 mOhms | 400 mV | 5.1 nC | Enhancement |
