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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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104
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Fairchild Semiconductor | MOSFET 150V N-CHANNEL POWERTRENCH MOSFET | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 105 A | 6.85 mOhms | 4 V | 64.5 nC | |||||
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958
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Infineon Technologies | MOSFET MOSFT 30V 105A 23nC 6mOhm Qg log lvl | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 105 A | 7.1 mOhms | 23 nC | ||||||
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312
In-stock
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Toshiba | MOSFET 60V N-Ch PWR FET 105A 110W 46nC | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 60 V | 105 A | 5.4 mOhms | 46 nC | |||||||
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VIEW | Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 15mOhms 260nC | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 105 A | 15 mOhms | 260 nC | Enhancement |
