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- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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220
In-stock
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IXYS | MOSFET -11 Amps -500V 0.75 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 11 A | 750 mOhms | - 0.122 V | 130 nC | Enhancement | |||
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27,770
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -55V -11A 175mOhm 12.7nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | |||||||
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1,469
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | Through Hole | TO-247-3 | Bulk | 1 Channel | Si | P-Channel | - 100 V | - 11 A | 210 mOhms |