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Package / Case :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
IXTH11P50
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RFQ
220
In-stock
IXYS MOSFET -11 Amps -500V 0.75 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si P-Channel - 500 V - 11 A 750 mOhms - 0.122 V 130 nC Enhancement
FU9024N
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RFQ
27,770
In-stock
Infineon Technologies MOSFET MOSFT P-Ch -55V -11A 175mOhm 12.7nC 20 V Through Hole TO-251-3     Tube 1 Channel Si P-Channel - 55 V - 11 A 175 mOhms   12.7 nC  
SFT1345-H
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RFQ
1,469
In-stock
onsemi MOSFET PCH 4V DRIVE SERIES   Through Hole TO-247-3     Bulk 1 Channel Si P-Channel - 100 V - 11 A 210 mOhms      
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