- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
37 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
437
In-stock
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STMicroelectronics | MOSFET N-channel 600V, 21A FDMesh II | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 160 mOhms | Enhancement | |||||
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GET PRICE |
1,440
In-stock
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STMicroelectronics | MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 160 mOhms | 3 V | 36 nC | Enhancement | MDmesh | ||
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GET PRICE |
798
In-stock
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Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 21 A | 160 mOhms | Enhancement | QFET | ||||
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GET PRICE |
815
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 26 A | 160 mOhms | Enhancement | UniFET | ||||
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GET PRICE |
45,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 24.3A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24.3 A | 160 mOhms | Enhancement | CoolMOS | ||||
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GET PRICE |
285
In-stock
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STMicroelectronics | MOSFET N-channel 600V, 21A FDMesh II | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 160 mOhms | Enhancement | |||||
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GET PRICE |
571
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 23.8A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 160 mOhms | 3 V | 75 nC | CoolMOS | |||
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GET PRICE |
3,340
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 24.3A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 24.3 A | 160 mOhms | CoolMOS | ||||||||
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GET PRICE |
277
In-stock
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Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 12 A | 160 mOhms | Enhancement | QFET | ||||
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GET PRICE |
394
In-stock
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STMicroelectronics | MOSFET N-CHANNEL 200V 0.15 OHM - 15A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 15 A | 160 mOhms | Enhancement | |||||
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GET PRICE |
219
In-stock
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STMicroelectronics | MOSFET N-Ch, 600V-0.13ohms FDMesh 21A | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 160 mOhms | Enhancement | |||||
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GET PRICE |
590
In-stock
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STMicroelectronics | MOSFET P-CH 60V 0.13Ohm 10A STripFET VI | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 160 mOhms | 2 V to 4 V | 6.4 nC | ||||
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GET PRICE |
60,300
In-stock
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STMicroelectronics | MOSFET N Ch 55V 3.2 120A Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 15 A | 160 mOhms | Enhancement | |||||
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GET PRICE |
100
In-stock
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IXYS | MOSFET MOSFET 650V/22A Ultra Junction X2 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 160 mOhms | 2.7 V | 38 nC | Enhancement | |||
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GET PRICE |
27
In-stock
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IXYS | MOSFET 46 Amps 500V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 46 A | 160 mOhms | 6 V | 260 nC | Enhancement | |||
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GET PRICE |
185
In-stock
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IXYS | MOSFET MOSFET 650V/22A Ultra Junction X2 | 30 V | Through Hole | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 160 mOhms | 2.7 V | 38 nC | Enhancement | |||
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GET PRICE |
98
In-stock
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IXYS | MOSFET MOSFET 650V/22A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 160 mOhms | 2.7 V | 38 nC | Enhancement | |||
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GET PRICE |
202
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-Ch QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 11.6 A | 160 mOhms | Enhancement | QFET | ||||
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GET PRICE |
65
In-stock
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Toshiba | MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 38 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 44 Amps 500V | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 46 A | 160 mOhms | 6 V | 260 nC | Enhancement | ||||
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GET PRICE |
4
In-stock
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IXYS | MOSFET -16 Amps -200V 0.22 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 16 A | 160 mOhms | - 5 V | 95 nC | Enhancement | |||
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VIEW | IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 52 A | 160 mOhms | 3.5 V to 6.5 V | 308 nC | Enhancement | HyperFET | |||
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GET PRICE |
1,002
In-stock
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Toshiba | MOSFET N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 38 nC | Enhancement | |||||
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GET PRICE |
401
In-stock
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Toshiba | MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 30 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 38 nC | DTMOSIV | |||||
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VIEW | Toshiba | MOSFET N-Ch DTMOSIV 600 V 130W 1350pF 15.8A | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 3.7 V | 38 nC | Enhancement | ||||
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GET PRICE |
9,000
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 28.4 A | 160 mOhms | Enhancement | |||||
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VIEW | IXYS | MOSFET 32 Amps 500V 0.15 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 32 A | 160 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.16 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 32 Amps 500V 0.15 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 32 A | 160 mOhms | Enhancement | HyperFET |
