- Vgs - Gate-Source Voltage :
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20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,058
In-stock
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Fairchild Semiconductor | MOSFET N-CH/900V/7A/A.QFET | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 7.2 A | 1.1 Ohms | Enhancement | QFET | |||||
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5,040
In-stock
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Fairchild Semiconductor | MOSFET N-Channel UniFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 4.4 A | 1.1 Ohms | 5 V | 6 nC | |||||
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1,820
In-stock
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Fairchild Semiconductor | MOSFET N-CH/400 /6A/CFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 6 A | 1.1 Ohms | Enhancement | QFET | |||||
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278
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Ch QFET Advance | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 1.1 Ohms | Enhancement | QFET | |||||
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838
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 4A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | |||
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394
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 4A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | |||
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492
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 4A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | |||
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467
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 4A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | |||
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62
In-stock
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IXYS | MOSFET 10 Amps 800V 1.1 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 1.1 Ohms | 5.5 V | 40 nC | Enhancement | PolarHV, HiPerFET | |||
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59
In-stock
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IXYS | MOSFET 10 Amps 800V 1.1 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 1.1 Ohms | 5.5 V | 40 nC | Enhancement | PolarHV, HiPerFET | |||
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1
In-stock
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IXYS | MOSFET 9 Amps 800V 1.1 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 9 A | 1.1 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 6 Amps 500V 1.1 Ohms Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6 A | 1.1 Ohms | Enhancement | ||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 7.5A 450V 35W 600pF 1.1 Ohm | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 450 V | 7.5 A | 1.1 Ohms | |||||||||||
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46
In-stock
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IXYS | MOSFET 1.1 Ohms Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 1.1 Ohms | 5.5 V | 20 nC | Enhancement | PolarHV | |||
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29
In-stock
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IXYS | MOSFET 7 Amps 600V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4 A | 1.1 Ohms | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650 V 1.1 Ohm 5.4 A SuperMESH3 | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.4 A | 1.1 Ohms | 3.75 V | 33 nC | Enhancement | SuperMesh | |||
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VIEW | IXYS | MOSFET 900V 12A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 12 A | 1.1 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 8 Amps 800V 1.1 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 1.1 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 10 Amps 900V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 10 A | 1.1 Ohms | Enhancement | HyperFET | |||||
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14
In-stock
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Microsemi | MOSFET N Channel MOSFET | 20 V | Through Hole | TO-39-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 400 V | 3 A | 1.1 Ohms | 2 V | 34.75 nC | Enhancement |
