- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,934
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.2 kV | 12 A | 620 mOhms | 3 V | 44.2 nC | Enhancement | ||||
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3,478
In-stock
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Fairchild Semiconductor | MOSFET 250V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 250 V | - 9.4 A | 620 mOhms | Enhancement | QFET | ||||
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290
In-stock
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STMicroelectronics | MOSFET N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected MDmesh... | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.2 kV | 12 A | 620 mOhms | 3 V | 44.2 nC | Enhancement | ||||
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593
In-stock
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STMicroelectronics | MOSFET N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.2 kV | 12 A | 620 mOhms | 3 V | 44.2 nC | Enhancement | ||||
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1,096
In-stock
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Fairchild Semiconductor | MOSFET 250V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 250 V | - 6 A | 620 mOhms | Enhancement | QFET | ||||
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347
In-stock
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Fairchild Semiconductor | MOSFET 250V P-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 250 V | - 10.5 A | 620 mOhms | Enhancement | QFET | ||||
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468
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 6.9A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6.9 A | 620 mOhms | 2.5 V | 42 nC | Enhancement | CoolMOS | ||
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120
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 6.9A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6.9 A | 620 mOhms | 2.5 V | 42 nC | Enhancement | CoolMOS | ||
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77
In-stock
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Toshiba | MOSFET N-Ch MOS 10A 500V 45W 1050pF 0.72 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 500 V | 10 A | 620 mOhms | 20 nC |
