- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,177
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 7A 30mOhm 19nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.3 A | 30 mOhms | 1 V | 19 nC | ||||
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239,600
In-stock
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IR / Infineon | MOSFET MOSFT DUAL N/PCh 30V 7.3A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 7.3 A | 46 mOhms | 22 nC | |||||||
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973
In-stock
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Infineon Technologies | MOSFET 30V DUAL N / P CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 30 V | 7.3 A | 58 mOhms | - 1 V, 1 V | 22 nC | Enhancement | |||
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1,248
In-stock
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Diodes Incorporated | MOSFET 30V Dual N-channel Enhance. Mode MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.3 A | 24 mOhms | Enhancement |
