- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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1,647
In-stock
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onsemi | MOSFET NFET WDFN8 30V 9A 20MOHM | SMD/SMT | WDFN-8 | Reel | Si | N-Channel | 30 V | 8.3 A | 17.4 mOhms | |||||||||
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2,659
In-stock
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Infineon Technologies | MOSFET 30V 8.3A 17.5mOhm 2.5V drive capable | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.3 A | 17.5 mOhms | ||||||
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1,263
In-stock
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IR / Infineon | MOSFET MOSFT 30V 8.3A 25mOhm 12nC | 12 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 8.3 A | 25 mOhms | 12 nC | ||||||
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1,579
In-stock
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IR / Infineon | MOSFET MOSFT 30V 8.3A 25mOhm 9.5nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 8.3 A | 25 mOhms | 9.5 nC | ||||||
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2,630
In-stock
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IR / Infineon | MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 14nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.3 A | 25 mOhms | 10.5 nC | Enhancement | |||
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2,270
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 25mOhms 9.5nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 8.3 A | 25 mOhms | 9.5 nC | Enhancement |
