- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,601
In-stock
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Fairchild Semiconductor | MOSFET PT9 N-ch 30V/12V Power Trench MOSFET | 12 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 1.23 mOhms | 1.3 V | 78 nC | Enhancement | Power Clip | |||
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2,182
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 13 mOhms | 1.35 V to 2.35 V | 8.3 nC | Enhancement | StrongIRFET | |||
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2,528
In-stock
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Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 3.5 mOhms | 1.1 V | 35 nC | Enhancement | NexFET | |||
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400
In-stock
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Texas instruments | MOSFET 30V NCH NexFET MOSFET | 20 V | SMD/SMT | VSONP-8 | - 40 C | + 85 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 5.3 mOhms | 1.4 V | 27 nC | NexFET | ||||
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9,947
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 13 mOhms | Enhancement | OptiMOS | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 30V 14m 35A 16mOhm STripFET V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 16 mOhms | 5.4 nC | Enhancement |
