- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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614
In-stock
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STMicroelectronics | MOSFET Dual N-Ch 30V 10A STripFET V Pwr | 22 V | SMD/SMT | SOIC-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 10 A | 15.5 mOhms | 1 V | 5.4 nC | ||||||
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576
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V,SO-8,2.5K | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 10.5 nC | Enhancement | ||||
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24
In-stock
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STMicroelectronics | MOSFET Dual N-CH 30 V 10 A SO-8 STri | SMD/SMT | SOIC-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 10 A | 21 mOhms | |||||||||
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5,000
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 10 A | 12 mOhms | 800 mV | 8.7 nC | Enhancement |
