- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 0.0075 Ohms (1)
- 1.3 mOhms (1)
- 1.6 mOhms (4)
- 119 mOhms (3)
- 120 mOhms (2)
- 128 mOhms (1)
- 135 mOhms (1)
- 14.5 mOhms (2)
- 18 mOhms (2)
- 2.2 mOhms (2)
- 2.3 mOhms (1)
- 2.7 Ohms (4)
- 2.8 mOhms (1)
- 25 mOhms (1)
- 3 mOhms (1)
- 3.3 mOhms (2)
- 330 mOhms (1)
- 44 mOhms (1)
- 5.4 mOhms (2)
- 5.5 mOhms (1)
- 55 mOhms (1)
- 57 mOhms (2)
- 6.3 mOhms (1)
- 7.8 mOhms (1)
- 820 uOhms (1)
- 9 mOhms (1)
- 900 uOhms (3)
- 950 uOhms (1)
45 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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20,446
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 900 uOhms | 1.2 V | 96 nC | Enhancement | OptiMOS | ||||
|
3,443
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 1.4A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 119 mOhms | 1.2 V | 600 pC | Enhancement | |||||
|
2,997
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET, PowerClip 33 Single | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 174 A | 1.3 mOhms | 1.2 V | 67 nC | Enhancement | PowerTrench Power Clip | ||||
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7,471
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.2 mOhms | 1.2 V | 35 nC | Enhancement | OptiMOS | ||||
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7,312
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 1.6 mOhms | 1.2 V | 44 nC | Enhancement | OptiMOS | ||||
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12,597
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 5.4 mOhms | 1.2 V | 13 nC | Enhancement | OptiMOS | ||||
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13,871
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+N-CH | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.1 A | 25 mOhms | 1.2 V | 4.4 nC | Enhancement | |||||
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4,836
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.2 mOhms | 1.2 V | 35 nC | Enhancement | OptiMOS | ||||
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3,499
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 3.3 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | ||||
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2,990
In-stock
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Infineon Technologies | MOSFET LV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 72 A | 3 mOhms | 1.2 V | 15 nC | Enhancement | |||||
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2,850
In-stock
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onsemi | MOSFET NCH+NCH 7A 30V 4V DR | 20 V | SMD/SMT | ECH-8 | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7 A | 55 mOhms | 1.2 V | 11.8 nC | Enhancement | ||||||
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8,142
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 2.3A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.3 A | 44 mOhms | 1.2 V | 1.5 nC | Enhancement | |||||
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988
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 900 uOhms | 1.2 V | 90 nC | Enhancement | |||||
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12,778
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 1.4A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 119 mOhms | 1.2 V | 600 pC | Enhancement | |||||
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7,239
In-stock
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Nexperia | MOSFET NX3020NAK/TO-236AB/REEL 7" Q3/ | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 200 mA | 2.7 Ohms | 1.2 V | 0.34 nC | Enhancement | ||||||
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13,120
In-stock
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Nexperia | MOSFET NX3020NAKW/SC-70/REEL 7" Q1/T1 | - 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 180 mA | 2.7 Ohms | 1.2 V | 0.34 nC | ||||||
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4,612
In-stock
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Nexperia | MOSFET NX3020NAKS/SC-88/REEL 7" Q1/T1 | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 180 mA | 2.7 Ohms | 1.2 V | 0.34 nC | Enhancement | ||||||
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1,631
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 3.7A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.7 A | 18 mOhms | 1.2 V | 6.6 nC | Enhancement | |||||
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7,559
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 1.4A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 119 mOhms | 1.2 V | 600 pC | Enhancement | |||||
|
2,440
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 14.5 mOhms | 1.2 V | 19 nC | Enhancement | OptiMOS | ||||
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3,558
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 120 mOhms | 1.2 V | 600 pC | Enhancement | |||||
|
9,635
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 2.3A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.3 A | 57 mOhms | 1.2 V | 1.5 nC | Enhancement | |||||
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9,737
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 2.3A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.3 A | 57 mOhms | 1.2 V | 1.5 nC | Enhancement | |||||
|
2,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 14.5 mOhms | 1.2 V | 19 nC | Enhancement | |||||
|
620
In-stock
|
onsemi | MOSFET 30V 56A 5.5 mOhm Single N-Chan u8FL | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14.3 A | 5.5 mOhms | 1.2 V | 28 nC | |||||||
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1,765
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 120 mOhms | 1.2 V | 600 pC | Enhancement | |||||
|
2,895
In-stock
|
Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.3 mOhms | 1.2 V | 24 nC | NexFET | |||||
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1,691
In-stock
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Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 9 mOhms | 1.2 V | 5.4 nC | NexFET | |||||
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250
In-stock
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Texas instruments | MOSFET 30V N-Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 950 uOhms | 1.2 V | 51 nC | Enhancement | |||||
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.6 mOhms | 1.2 V | 44 nC | Enhancement | OptiMOS |