- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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668
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel Power Trench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 7.7 mOhms | 1 V | 28 nC | Enhancement | PowerTrench | |||
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620
In-stock
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onsemi | MOSFET 30V 56A 5.5 mOhm Single N-Chan u8FL | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14.3 A | 5.5 mOhms | 1.2 V | 28 nC | ||||||
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1,772
In-stock
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Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | 1.1 V | 28 nC | NexFET | ||||
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VIEW | Infineon Technologies | MOSFET 30V N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | Micro-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 170 A | 3.2 mOhms | 28 nC | Directfet | |||||||
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VIEW | Infineon Technologies | MOSFET 30V N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 3.5 mOhms | 28 nC | Directfet | |||||||
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VIEW | IR / Infineon | MOSFET 30V 1 N-CH HEXFET 2.5mOhms 28nC | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 30 V | 140 A | 2.8 mOhms | 28 nC |
