- Manufacture :
- Rds On - Drain-Source Resistance :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 1.7mOhms 49nC | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 30 V | 180 A | 1.84 mOhms | 49 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 2.5mOhms 33nC | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 2.7 mOhms | 33 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET DIRECTFET MX | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 30 V | 170 A | 2.4 mOhms | 36 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET 30V N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 3.5 mOhms | 28 nC | Directfet | |||||||
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VIEW | IR / Infineon | MOSFET 30V 1 N-CH HEXFET 2.5mOhms 28nC | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 30 V | 140 A | 2.8 mOhms | 28 nC | ||||||||
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2,665
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET DIRECTFET MX | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 30 V | 32 A | 1.8 mOhms | 47 nC | ||||||||
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420
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET DIRECTFET MX | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 170 A | 3.2 mOhms | 1.35 V to 2.35 V | 36 nC | Enhancement |
