- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,416
In-stock
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Fairchild Semiconductor | MOSFET 40/20V 550A NChnl LL Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.3 mOhms | 1 V | 30 nC | Enhancement | ||||
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3,742
In-stock
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Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.0046 Ohms | 2.5 V | 85 nC | Enhancement | TrenchFET | |||
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2,467
In-stock
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Vishay Semiconductors | MOSFET 40V 50A 71W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.0046 Ohms | 2.5 V | 85 nC | Enhancement | TrenchFET | |||
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2,496
In-stock
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Fairchild Semiconductor | MOSFET MV8 40/20V 740A N-Channel Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.9 mOhms | 2 V | 24 nC | Enhancement | PowerTrench | |||
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494
In-stock
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Fairchild Semiconductor | MOSFET N-channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 3.5 mOhms | 2 V | 23.5 nC | Enhancement | PowerTrench | |||
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1,062
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel POWER TRENCH MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 5 mOhms | 60 nC | PowerTrench | |||||
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403
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 8.5 mOhms | Enhancement | PowerTrench | |||||
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GET PRICE |
10,040
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 8 mOhms | Enhancement | OptiMOS | ||||
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1,608
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.2 mOhms | 2 V | 22.4 nC | Enhancement | ||||
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GET PRICE |
13,930
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2 | - 16 V, + 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 6.2 mOhms | 1.2 V | 30 nC | Enhancement | |||
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GET PRICE |
9,200
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.2 mOhms | 2 V | 22.4 nC | Enhancement | OptiMOS | ||
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6,610
In-stock
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Texas instruments | MOSFET 40V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 1.7 mOhms | 1.4 V | 150 nC | Enhancement | NexFET | |||
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37,800
In-stock
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Texas instruments | MOSFET 40V,N-Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 5.3 mOhms | 1.5 V | 19 nC | Enhancement | ||||
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19,160
In-stock
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Toshiba | MOSFET N-ch 40V 50A DP | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 10.2 mOhms | ||||||||||
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250
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | SON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 4.1 mOhms | 1.5 V | 38 nC | Enhancement | NexFET | |||
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GET PRICE |
16,730
In-stock
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Siliconix / Vishay | MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.003 Ohms | 1.5 V | 130 nC | Enhancement | TrenchFET | ||
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798
In-stock
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Vishay Semiconductors | MOSFET 40 V 40A 150W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.0025 Ohms | 1.5 V | 130 nC | Enhancement | TrenchFET | |||
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VIEW | Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-Reverse-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.003 Ohms | 2.5 V | 105 nC | Enhancement | TrenchFET | |||
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VIEW | Vishay Semiconductors | MOSFET 40V 50A 150W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.003 Ohms | 2.5 V | 105 nC | Enhancement | TrenchFET | |||
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VIEW | Vishay Semiconductors | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.0043 Ohms | 1.5 V | 75 nC | Enhancement |
