- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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29,320
In-stock
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Fairchild Semiconductor | MOSFET NChan 40V 76A 69W PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 40 V | 76 A | 3.1 mOhms | 1.8 V | 46 nC | PowerTrench | |||||
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2,384
In-stock
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Fairchild Semiconductor | MOSFET 40V N Chan Shielded Gate Power Trench | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.1 mOhms | 3 V | 80 nC | PowerTrench Power Clip | |||||
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391
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 3.1mOhms 100A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.1 mOhms | 2.2 V to 3.9 V | 66 nC | Enhancement | CoolIRFet | |||
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20
In-stock
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IR / Infineon | MOSFET MOSFT 40V 200A 3.1mOhm 75nC Log Lvl | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 3.1 mOhms | 2.7 V | 110 nC | |||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 80A 40V 100W 4340pF 0.0031 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.1 mOhms |
