- Vgs - Gate-Source Voltage :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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262,481
In-stock
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onsemi | MOSFET 60V 115mA N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 7.5 Ohms | Enhancement | ||||||
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GET PRICE |
327,120
In-stock
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Nexperia | MOSFET P-CH -50 V -180 mA | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 50 V | - 180 mA | 7.5 Ohms | 0.35 nC | ||||||||
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1,113
In-stock
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Fairchild Semiconductor | MOSFET 25V Asymmetric Dual N-Channel Pwr Trench | 12 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 88 A | 7.5 Ohms | 1.6 V | 25 nC | PowerTrench SyncFET Power Clip | ||||
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80,545
In-stock
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Diodes Incorporated | MOSFET 60V 200mW | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 70 V | 115 mA | 7.5 Ohms | Enhancement | ||||||
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19,590
In-stock
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Nexperia | MOSFET P-CH -50 V -150 mA | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | P-Channel | - 50 V | - 150 mA | 7.5 Ohms | 0.35 nC | |||||||||
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8,688
In-stock
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Diodes Incorporated | MOSFET N-Ch 60V 3A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 150 mA | 7.5 Ohms | Enhancement | ||||||
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17,207
In-stock
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Nexperia | MOSFET P-CH -50 V -230 mA 50V 230mA | SMD/SMT | DFN1006-3 | Reel | 1 Channel | Si | P-Channel | - 50 V | - 230 mA | 7.5 Ohms | 0.35 nC | |||||||||
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22,334
In-stock
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Fairchild Semiconductor | MOSFET 0.115A, 60V N-Channel SOT-23 MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 7.5 Ohms | 1.81 V | Enhancement | |||||
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33,851
In-stock
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onsemi | MOSFET 60V 115mA N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 7.5 Ohms | Enhancement | ||||||
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11,043
In-stock
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Fairchild Semiconductor | MOSFET N-Chan Enhancement Mode Field Effect | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 7.5 Ohms | Enhancement | ||||||
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2,365
In-stock
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Fairchild Semiconductor | MOSFET N-Chan Enhancement Mode Field Effect | 20 V | SMD/SMT | SOT-523F-3 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 280 mA | 7.5 Ohms | Enhancement | ||||||
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9,873
In-stock
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Fairchild Semiconductor | MOSFET N-Chan Enhancement Mode Field Effect | 20 V | SMD/SMT | SOT-523F-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 7.5 Ohms | Enhancement | ||||||
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7,289
In-stock
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Fairchild Semiconductor | MOSFET N-Chan Enhancement Mode Field Effect | 20 V | SMD/SMT | SOT-523F-3 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 280 mA | 7.5 Ohms | Enhancement | ||||||
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262
In-stock
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Nexperia | MOSFET P-CH -50 V -160 mA | SMD/SMT | SOT-363-6 | Reel | 1 Channel | Si | P-Channel | - 50 V | - 160 mA | 7.5 Ohms | 0.35 nC | |||||||||
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1,082
In-stock
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Infineon Technologies | MOSFET P-Ch -250V -260mA SOT-223-4 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 260 mA | 7.5 Ohms | - 2 V | - 5.4 nC | Enhancement | ||||
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595
In-stock
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Infineon Technologies | MOSFET P-Ch -250V -260mA SOT-223-4 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 260 mA | 7.5 Ohms | - 2 V | - 5.4 nC | Enhancement | ||||
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20
In-stock
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IXYS | MOSFET 2.4 Amps 1200V 7.5 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 2.4 A | 7.5 Ohms | Enhancement | ||||||
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40
In-stock
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IXYS | MOSFET 2 Amps 1000V 7.5 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 2 A | 7.5 Ohms | Enhancement | ||||||
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89,734
In-stock
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Fairchild Semiconductor | MOSFET N-Chan Enhancement Mode Field Effect | 20 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 115 mA | 7.5 Ohms | Enhancement | ||||||
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50,900
In-stock
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onsemi | MOSFET NFET 60V 115MA 7.5O | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 7.5 Ohms | 1 V to 2.5 V | ||||||
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40,000
In-stock
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onsemi | MOSFET NFET 60V 115MA 7.5O | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 7.5 Ohms | ||||||||||
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4,000
In-stock
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Nexperia | MOSFET P-CH -50 V -170 mA | SMD/SMT | SOT-666-6 | Reel | 1 Channel | Si | P-Channel | - 50 V | - 170 mA | 7.5 Ohms | 0.35 nC | |||||||||
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VIEW | IXYS | MOSFET 2 Amps 1000V 7.5 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 2 A | 7.5 Ohms | Enhancement | ||||||
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VIEW | Nexperia | MOSFET P-Chan -50V -230mA | 20 V | SMD/SMT | DFN1006B-3 | Reel | 1 Channel | Si | P-Channel | - 50 V | - 230 mA | 7.5 Ohms |
