- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Applied Filters :
33 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
3,594
In-stock
|
Fairchild Semiconductor | MOSFET 25V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 23 A | 2.4 mOhms | 1.7 V | 32 nC | PowerTrench SyncFET | |||||||
|
2,580
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 49 A | 2.4 mOhms | 1.7 V | 20 nC | PowerTrench SyncFET | |||||
|
1,699
In-stock
|
Fairchild Semiconductor | MOSFET NCh 80V 120A 5.3mOhm PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.4 mOhms | 3.3 V | 75 nC | Enhancement | PowerTrench | ||||
|
2,052
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 265 A | 2.4 mOhms | Enhancement | PowerTrench | ||||||
|
39,600
In-stock
|
Infineon Technologies | MOSFET 40V 90A 2.5mOhm 89nC StrongIRFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.4 mOhms | 2.2 V to 3.9 V | 89 nC | Enhancement | StrongIRFET | ||||
|
1,550
In-stock
|
IR / Infineon | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 254 A | 2.4 mOhms | 1 V | 91 nC | Enhancement | StrongIRFET | ||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 2.4 mOhms | 4 V | 183 nC | Enhancement | |||||
|
927
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 4 V | 120 nC | ||||||
|
711
In-stock
|
Infineon Technologies | MOSFET MOSFET N CH 60V 195A D2PAK | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 232 A | 2.4 mOhms | 3.7 V | 279 nC | StrongIRFET | ||||||||
|
3,666
In-stock
|
Fairchild Semiconductor | MOSFET NCh 30V 116A 2.4mOhm | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 116 A | 2.4 mOhms | 2.5 V | 88 nC | Enhancement | PowerTrench | ||||||
|
213
In-stock
|
Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 229 A | 2.4 mOhms | 4.5 V | 137 nC | Enhancement | PowerTrench | ||||
|
450
In-stock
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 3mOhms 120nC | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | |||||||||
|
242
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 270A 2.4mOhm 91nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 270 A | 2.4 mOhms | 2.5 V | 140 nC | ||||||||
|
18,400
In-stock
|
IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 160 A | 2.4 mOhms | 1.8 V | 35 nC | Directfet | |||||
|
513
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.4 mOhms | Enhancement | OptiMOS | ||||||
|
250
In-stock
|
Infineon Technologies | MOSFET 60V 210A 3 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | ||||||||||
|
29,500
In-stock
|
Fairchild Semiconductor | MOSFET 100V/20V N-Channel PTNG MOSFET | +/- 20 V | SMD/SMT | Power56-8 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 100 V | 151 A | 2.4 mOhms | 2 V | 84 nC | Enhancement | ||||||
|
VIEW | Infineon Technologies | MOSFET 60V 210A 3 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | |||||||||
|
645
In-stock
|
IR / Infineon | MOSFET 60V 210A 3 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | |||||||||
|
VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET DIRECTFET MX | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 30 V | 170 A | 2.4 mOhms | 36 nC | |||||||||
|
VIEW | Infineon Technologies | MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 235 A | 2.4 mOhms | 4 V | 160 nC | Enhancement | |||||
|
VIEW | Infineon Technologies | MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 235 A | 2.4 mOhms | 160 nC | |||||||||
|
VIEW | Infineon Technologies | MOSFET Auto 40V N-Ch FET 3.1mOhms 100A | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.4 mOhms | 66 nC | CoolIRFet | |||||||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.4 mOhms | 4 V | 270 nC | Enhancement | |||||
|
4,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 2.4 mOhms | Enhancement | OptiMOS | ||||||
|
3,117
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 260A 2.4mOhm 160nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 75 A | 2.4 mOhms | 160 nC | Enhancement | ||||||
|
VIEW | STMicroelectronics | MOSFET N-Ch 60V 0.0016 Ohm 180A STripFET DG VI | 20 V | SMD/SMT | H2PAK-2 | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 2.4 mOhms | 4 V | 183 nC | ||||||||
|
580
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.4 mOhms | 4 V | 270 nC | Enhancement | OptiMOS | ||||
|
2,725
In-stock
|
IR / Infineon | MOSFET MOSFET, 25V,70A 2.4 mo, 16nC,PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 30 A | 2.4 mOhms | 1.6 V | 32 nC | ||||||||
|
159
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.4 mOhms | 150 nC | OptiMOS |