MOSFET - Kaimeite

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5 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IRFR3504ZTRPBF	1+ $1.620 10+ $1.380 100+ $1.060 500+ $0.935 6000+ $0.630		PDF RFQ	2,443 In-stock	IR / Infineon	MOSFET MOSFT 40V 77A 9mOhm 30nC Qg		SMD/SMT	TO-252-3		+ 175 C	Reel	1 Channel	Si	N-Channel	40 V	77 A	9 mOhms	4 V	45 nC
	BSZ120P03NS3E G	1+ $0.650 10+ $0.540 100+ $0.348 1000+ $0.279 5000+ $0.235		PDF RFQ	5,044 In-stock	Infineon Technologies	MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3	+/- 25 V	SMD/SMT	TSDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	P-Channel	- 30 V	- 40 A	9 mOhms	- 3.1 V	45 nC	Enhancement	OptiMOS
	BSZ120P03NS3 G		GET PRICE	PDF RFQ	24,170 In-stock	Infineon Technologies	MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3	+/- 25 V	SMD/SMT	TSDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	P-Channel	- 30 V	- 40 A	9 mOhms	- 3.1 V	45 nC	Enhancement	OptiMOS
	BSZ120P03NS3GATMA1		GET PRICE	PDF RFQ	49,940 In-stock	Infineon Technologies	MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3	+/- 25 V	SMD/SMT	TSDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	P-Channel	- 30 V	- 40 A	9 mOhms	- 3.1 V	45 nC	Enhancement
	BSZ120P03NS3EGATMA1	5000+ $0.235 10000+ $0.227 25000+ $0.218 50000+ $0.215	GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3	+/- 25 V	SMD/SMT	TSDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	P-Channel	- 30 V	- 40 A	9 mOhms	- 3.1 V	45 nC	Enhancement

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