- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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12,234
In-stock
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IR / Infineon | MOSFET MOSFT PCh -150V -2.2A 240mOhm 33nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 150 V | - 2.2 A | 240 mOhms | 33 nC | ||||||||
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2,464
In-stock
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IR / Infineon | MOSFET 1 P-CH -150V HEXFET 240mOhms 33nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 2.2 A | 240 mOhms | - 5 V | 33 nC | Enhancement | ||||
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4,369
In-stock
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Diodes Incorporated | MOSFET 100V P-CH MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 9 A | 240 mOhms | - 3 V | 17.5 nC | Enhancement | ||||
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4,002
In-stock
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Fairchild Semiconductor | MOSFET 20V Sgl N-Chl 2.5V Spec PwrTrch MOSFET | 12 V | SMD/SMT | SOT-523F-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 600 mA | 240 mOhms | Enhancement | PowerTrench | |||||
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1,754
In-stock
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onsemi | MOSFET -30V -1.95A P-Channel | - 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.95 A | 240 mOhms | Enhancement | ||||||
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56
In-stock
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IXYS | MOSFET 30 Amps 600V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 4.5 V | 335 nC | Enhancement | |||||
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11,841
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.9 A | 240 mOhms | - 1 V | 4.6 nC | Enhancement | ||||
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7,907
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID: -2A, VDSS: -60V | - 20 V, + 10 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2 A | 240 mOhms | - 2 V | 8.3 nC | Enhancement | |||||
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4,981
In-stock
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STMicroelectronics | MOSFET N-Ch 550V 0.18 13A MDmesh M5 Power MOS | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 550 V | 13 A | 240 mOhms | ||||||||||
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VIEW | IXYS | MOSFET 44 Amps 1000V 0.22 Rds | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 240 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET TenchP Power MOSFET | SMD/SMT | TO-263-3 | Tube | Si | P-Channel | - 150 V | - 15 A | 240 mOhms | |||||||||||
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VIEW | IXYS | MOSFET TrenchP Power MOSFET | SMD/SMT | TO-252-3 | Tube | Si | P-Channel | - 150 V | - 15 A | 240 mOhms | |||||||||||
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VIEW | IXYS | MOSFET 600V 30A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 30.0 Amps 600 V 0.24 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 5 V | 82 nC | Enhancement | PolarHV | |||
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VIEW | IXYS | MOSFET 33 Amps 1000V 0.24 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 33 A | 240 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 24 Amps 500V 0.23 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 240 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET -150V -15A | SMD/SMT | TO-263-3 | Tube | Si | P-Channel | - 150 V | - 15 A | 240 mOhms | |||||||||||
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2,465
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 550 V | 13 A | 240 mOhms | 2 V | 19.5 nC | Enhancement |
