- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
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27 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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13,530
In-stock
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Infineon Technologies | MOSFET 100VPower transistor OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4.7 mOhms | 2.2 V | 70 nC | Enhancement | ||||
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551
In-stock
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Fairchild Semiconductor | MOSFET TOLL 150V | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 169 A | 5 mOhms | 2 V | 70 nC | Enhancement | PowerTrench | |||
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770
In-stock
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Fairchild Semiconductor | MOSFET N-Ch Power Trench MOSFET 150V 169A | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 169 A | 5 mOhms | 2.8 V | 70 nC | PowerTrench | ||||
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1,153
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | |||
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3,835
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 201 A | 1.4 mOhms | 2.2 V | 70 nC | Enhancement | StrongIRFET | |||
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1,980
In-stock
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Vishay Semiconductors | MOSFET 100V 40A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-Reverse-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 0.019 Ohms | 1.5 V | 70 nC | Enhancement | TrenchFET | |||
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4,756
In-stock
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IR / Infineon | MOSFET MOSFT 55V 56A 16mOhm 70nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | ||||||||
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2,132
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3 mOhms | 2 V | 70 nC | Enhancement | ||||
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614
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 26mOhms | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | |||||
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749
In-stock
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STMicroelectronics | MOSFET N-channel 800 V MDMesh | SMD/SMT | TO-263-3 | Reel | Si | N-Channel | 800 V | 17 A | 295 mOhms | 70 nC | ||||||||||
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1,644
In-stock
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Siliconix / Vishay | MOSFET 100V 50A 45watt AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 0.0071 Ohms | 1.5 V | 70 nC | Enhancement | TrenchFET | |||
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81,700
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 62A 26mOhm 70nC Qg | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | |||||
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GET PRICE |
90,600
In-stock
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onsemi | MOSFET NFET SO8FL 40V 200A | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 2.2 mOhms | 1.2 V | 70 nC | Enhancement | |||
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434
In-stock
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Infineon Technologies | MOSFET 200V SINGLE N-CH 82mOhms 70nC | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 31 A | 82 mOhms | 70 nC | Enhancement | |||||
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1,400
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 16mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | |||||
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183
In-stock
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IXYS | MOSFET 62 Amps 150V 0.04 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 62 A | 33 mOhms | 5.5 V | 70 nC | Enhancement | PolarHT | |||
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323
In-stock
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IR / Infineon | MOSFET MOSFT 200V 31A 82mOhm 70nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 200 V | 31 A | 82 mOhms | 70 nC | Enhancement | ||||||
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75
In-stock
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IXYS | MOSFET 50 Amps 200V 0.06 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 60 mOhms | 5 V | 70 nC | Enhancement | PolarHT | |||
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4,000
In-stock
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Infineon Technologies | MOSFET 55V N-CH HEXFET 16mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | |||||
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9,000
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 38 A | 18 mOhms | 1.84 V | 70 nC | PowerTrench | |||||
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725
In-stock
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Vishay Semiconductors | MOSFET 150V 40A 166W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 40 A | 0.027 Ohms | 2.5 V | 70 nC | Enhancement | TrenchFET | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | ||||||
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VIEW | Vishay Semiconductors | MOSFET 100V 40A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 0.019 Ohms | 1.5 V | 70 nC | Enhancement | TrenchFET | |||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement |
