- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
23,701
In-stock
|
Infineon Technologies | MOSFET MOSFT 25V 5.8A 24mOhm 5.4 Qg | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 25 V | 5.8 A | 41 mOhms | 5.4 nC | ||||||||
|
|
9,332
In-stock
|
Vishay Semiconductors | MOSFET 60V (D-S) -/+20V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 100 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.6 A | 0.23 Ohms | - 2.5 V | 5.4 nC | Enhancement | TrenchFET | |||
|
|
13,000
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12.4mOhms 5.4nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 29 A | 17.9 mOhms | 1.35 V to 2.35 V | 5.4 nC | Enhancement | ||||
|
|
4,526
In-stock
|
IR / Infineon | MOSFET MOSFT DUAL PCh -20V 1.7A Micro 8 | 12 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 1.7 A | 270 mOhms | 5.4 nC | Enhancement | |||||
|
|
4,952
In-stock
|
Diodes Incorporated | MOSFET MOSFET,N-CHANNEL | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.47 A | 21 mOhms | 5.4 nC | ||||||
|
|
3,475
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V 8V-24V SOT323 T&R 3K | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.1 A | 140 mOhms | 1 V | 5.4 nC | Enhancement | ||||
|
|
614
In-stock
|
STMicroelectronics | MOSFET Dual N-Ch 30V 10A STripFET V Pwr | 22 V | SMD/SMT | SOIC-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 10 A | 15.5 mOhms | 1 V | 5.4 nC | |||||||
|
|
2,098
In-stock
|
Diodes Incorporated | MOSFET N-Chan 100V MOSFET (UMOS) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.5 A | 350 mOhms | 4 V | 5.4 nC | Enhancement | ||||
|
|
1,690
In-stock
|
Diodes Incorporated | MOSFET MOSFET,N-CHANNEL 60V, 4.1A/- 5.0A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 3.7 A | 48 mOhms | 5.4 nC | ||||||
|
|
2,503
In-stock
|
IR / Infineon | MOSFET 30V 5nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 14.5 mOhms | 1.8 V | 5.4 nC | SmallPowIR | ||||
|
|
1,691
In-stock
|
Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 9 mOhms | 1.2 V | 5.4 nC | NexFET | ||||
|
|
1,218
In-stock
|
Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 11.6 mOhms | 1 V | 5.4 nC | Enhancement | ||||
|
|
3,000
In-stock
|
Toshiba | MOSFET WCSP6C S-MOS TRSTR Pd=0mW F=1MHz | 4.5 V | SMD/SMT | WCSP6C-6 | Reel | 1 Channel | Si | N-Channel | 12 V | 7 A | 14.4 mOhms | 5.4 nC | ||||||||
|
|
2,500
In-stock
|
Diodes Incorporated | MOSFET MOSFET,N-CHANNEL 60V, 3.6A/- 4.4A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 3.3 A | 48 mOhms | 5.4 nC | ||||||
|
|
750
In-stock
|
Texas instruments | MOSFET Dual N-Channel NexFET Pwr MOSFET | 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5 A | 99 mOhms | 600 mV | 5.4 nC | NexFET | ||||
|
|
VIEW | Diodes Incorporated | MOSFET P-Ch Enh Mode FET 33mOhm -20V -5.8A | - 6 V | SMD/SMT | U-WLB1515-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 28 mOhms | - 1.1 V | 5.4 nC | Enhancement | ||||
|
|
VIEW | STMicroelectronics | MOSFET N-Ch 30V 14m 35A 16mOhm STripFET V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 16 mOhms | 5.4 nC | Enhancement | |||||
|
|
5
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 12A 12.4mOhm 5.4nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 12.4 mOhms | 5.4 nC | Enhancement |
