- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,060
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 14A 8.5mOhm 8.3nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 12.5 mOhms | 8.3 nC | ||||||||
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3,580
In-stock
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IR / Infineon | MOSFET 100V DIGITAL AUDIO 1 N-CH HEXFET | 20 V | SMD/SMT | DirectFET-SB | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 51 mOhms | 8.3 nC | Enhancement | Directfet | ||||
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9,853
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W | 16 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 220 mOhms | 1 V | 8.3 nC | Enhancement | ||||
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2,080
In-stock
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Infineon Technologies | MOSFET 100V AUTO GRADE 1 N-CH HEXFET | 20 V | SMD/SMT | DirectFET-SB | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 62 mOhms | 4 V | 8.3 nC | Enhancement | ||||
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1,243
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W | 16 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 220 mOhms | 2.5 V | 8.3 nC | Enhancement | ||||
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1,111
In-stock
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Fairchild Semiconductor | MOSFET 2.5A Output Current GateDrive Optocopler | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 1.7 A | 1.9 Ohms | 5 V | 8.3 nC | Enhancement | UniFET | |||
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981
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 8.5mOhms 8.3nC | 20 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | N-Channel | 30 V | 14 A | 12.5 mOhms | 8.3 nC | ||||||||
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4,768
In-stock
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IR / Infineon | MOSFET MOSFT PCh -20V -4A 86mOhm 8.3nC | 20 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 86 mOhms | 8.3 nC | ||||||||
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227
In-stock
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IXYS | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 4 A | 850 mOhms | 3 V | 8.3 nC | Enhancement | |||||
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1,804
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 220mOhm 16Vgs | 16 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.24 A | 250 mOhms | 1 V | 8.3 nC | Enhancement | ||||
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2,182
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 13 mOhms | 1.35 V to 2.35 V | 8.3 nC | Enhancement | StrongIRFET | |||
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1,890
In-stock
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IR / Infineon | MOSFET MOSFT 30V 14A 8.5mOhm 8.3nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 12.5 mOhms | 8.3 nC | ||||||||
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2,850
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 20Vdss 8Vgss 40A | 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.2 A | 20 mOhms | 400 mV | 8.3 nC | Enhancement | ||||
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415
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 61V 100V N-Ch 3A 401pF 8.3nC | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.3 A | 220 mOhms | 1.7 V | 8.3 nC | Enhancement | ||||
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140
In-stock
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IXYS | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 4 A | 850 mOhms | 3 V | 8.3 nC | Enhancement | |||||
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2,422
In-stock
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Texas instruments | MOSFET 30V,NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 5.3 mOhms | 1.3 V | 8.3 nC | NexFET | ||||
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7,907
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID: -2A, VDSS: -60V | - 20 V, + 10 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2 A | 240 mOhms | - 2 V | 8.3 nC | Enhancement | |||||
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869
In-stock
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IR / Infineon | MOSFET MOSFT 100V 14.7A 60mOhm 8.3nC Qg | 20 V | SMD/SMT | DirectFET-SB | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 51 mOhms | 5 V | 8.3 nC | ||||||
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104
In-stock
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IR / Infineon | MOSFET MOSFT 30V 14A 8.7mOhm 8.1nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 8.7 mOhms | 8.3 nC | Enhancement | StrongIRFET |
