- Vgs - Gate-Source Voltage :
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10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,263
In-stock
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IR / Infineon | MOSFET 40V, 375A, .59 mOhm 220 nC Qg, Logic Lvl | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 564 A | 970 uOhms | 1 V | 220 nC | Enhancement | StrongIRFET | ||||
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3,143
In-stock
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Fairchild Semiconductor | MOSFET TO-leadless, PT8,40V 300A, 0.76mOhm | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 300 A | 650 Ohms | 4 V | 220 nC | Enhancement | PowerTrench | ||||
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311
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 105A 7mOhm 150nC | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 106 A | 7 mOhms | 4 V | 220 nC | ||||||||
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4,000
In-stock
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Fairchild Semiconductor | MOSFET TO-leadless, PT8, 40V, 300A, 0.76mOhm | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 300 A | 500 uOhms | 2 V | 220 nC | Enhancement | PowerTrench | ||||
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4,000
In-stock
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IR / Infineon | MOSFET 40V N-Ch 270A 1.0 mOhm 220nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 700 uOhms | 2.8 V | 220 nC | Directfet | |||||
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1,900
In-stock
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Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 900 uOhms | 1.5 V | 220 nC | Enhancement | |||||
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2,000
In-stock
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Vishay Semiconductors | MOSFET 40V Vds 160A Id AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 900 uOhms | 1.5 V | 220 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 1mOhm 220nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 700 Ohms | 220 nC | Enhancement | Directfet | |||||
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VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1mOhm | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 1 MOhms | 220 nC | Enhancement | ||||||
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800
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 4.6 mOhms | 1.2 V | 220 nC | Enhancement |