- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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26,157
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.2 mOhms | 2.1 V | 104 nC | Enhancement | ||||
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4,393
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.2 mOhms | 2.1 V | 104 nC | Enhancement | OptiMOS | |||
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975
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 5.5 mOhms | - 2.2 V | 104 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 5.5 mOhms | - 2.2 V | 104 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 200V 0.019 61A Mdmesh V | 25 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 61 A | 23 mOhms | 5 V | 104 nC |
