- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
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11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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13,473
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | SMD/SMT | SSOT-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 1.6 A | 261 mOhms | 2.9 nC | PowerTrench | ||||||||
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5,500
In-stock
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Fairchild Semiconductor | MOSFET PT5 150/25V Pch PowerTrench MOSFET | 25 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 80 mA | 1.2 Ohms | - 3.3 V | 2.9 nC | Enhancement | PowerTrench | ||||
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12,803
In-stock
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Infineon Technologies | MOSFET MOSFT 3.4A 63mOhm 30V 2.5V drv capable | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 3.4 A | 63 mOhms | 2.9 nC | |||||||||
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2,378
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | SMD/SMT | SOT-223-4 | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 2 A | 236 mOhms | 2.9 nC | PowerTrench | ||||||||
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6,960
In-stock
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onsemi | MOSFET NCH 1.2V Power MOSFE | 9 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2 A | 540 mOhms | 300 mV | 2.9 nC | Enhancement | |||||
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5,235
In-stock
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Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 15 mOhms | 2 V | 2.9 nC | Enhancement | NexFET | ||||
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3,144
In-stock
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Texas instruments | MOSFET Dual P-CH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 2.4 A | 27 mOhms | - 800 mV | 2.9 nC | NexFET | ||||||
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3,422
In-stock
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Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 60 A | 16 mOhms | 2 V | 2.9 nC | Enhancement | NexFET | ||||
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1,314
In-stock
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Texas instruments | MOSFET 12V PCH NexFET | - 6 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.2 A | 123 mOhms | - 0.6 V | 2.9 nC | NexFET | |||||
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20,600
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -20V -2.6A 135mOhm -2.5V cpbl | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.6 A | 157 mOhms | - 1.1 V | 2.9 nC | ||||||
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VIEW | Diodes Incorporated | MOSFET 60V P-Ch Enh Fet 20Vgs 625pD 219pF | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 60 V | - 1.1 A | 400 mOhms | - 3 V | 2.9 nC | Enhancement |