- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 20A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 750 | N-Channel | - | 30V | 20A (Tc) | 45 mOhm @ 14A, 10V | 1V @ 250µA | 15nC @ 4.5V | 450pF @ 25V | 4.5V, 10V | ±16V | 45W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 65A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 3000 | N-Channel | - | 30V | 65A (Tc) | 10 mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | 1030pF @ 15V | 4.5V, 10V | ±20V | 75W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 55A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 900 | N-Channel | - | 30V | 55A (Tc) | 19 mOhm @ 33A, 10V | 1V @ 250µA | 50nC @ 4.5V | 1600pF @ 25V | 4.5V, 10V | ±16V | 107W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 140A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 450 | N-Channel | - | 30V | 140A (Tc) | 6 mOhm @ 71A, 10V | 1V @ 250µA | 140nC @ 4.5V | 5000pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 200W (Tc) |
